Semiconductor device and method for manufacturing same
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United States of America Patent
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Aug 21, 2018
Grant Date -
Jan 25, 2018
app pub date -
Feb 1, 2016
filing date -
Feb 10, 2015
priority date (Note) -
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Abstract
A method for manufacturing a semiconductor device includes: preparing a first substrate; forming a metal film having a Ti layer as the most outermost surface on one surface of the first substrate a metal film having a Ti layer as the outermost surface; patterning the metal film to form a first pad portion; preparing a second substrate; forming on one surface of the second substrate a metal film having a Ti layer as the outermost surface; patterning the metal film to form a second pad portion; vacuum annealing the first substrate and the second substrate to remove an oxide film formed on the Ti layer in the first pad portion and the second pad portion; and bonding the first pad portion and the second pad portion together.
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