Method of making electrical antifuse

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United States of America Patent

PATENT NO 9941203
SERIAL NO

15639262

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Abstract

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An antifuse structure including a first electrode that is present in at a base of the opening in the dielectric material. The antifuse structure further includes an antifuse material layer comprising a phase change material alloy of tantalum and nitrogen. A first surface of the antifuse material layer is present in direct contact with the first electrode. A second electrode is present in direct contact with a second surface of the antifuse material layer that is opposite the first surface of the antifuse material layer.

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Patent Owner(s)

  • IBM CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yang, Chih-Chao Glenmont, US 1031 7515

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