TVS structures for high surge and low capacitance
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United States of America Patent
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Oct 9, 2018
Grant Date -
Jan 25, 2018
app pub date -
Sep 30, 2017
filing date -
Dec 9, 2014
priority date (Note) -
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Abstract
A transient voltage suppressing (TVS) device formed in an epitaxial layer of a first conductivity type supported on a semiconductor substrate. The TVS device further comprises a plurality of contact trenches opened and extended to a lower part of the epitaxial layer filled with a doped polysilicon layer of a second conductivity type wherein the trenches are further surrounded by a heavy dopant region of the second conductivity type. The TVS device further includes a metal contact layer disposed on a top surface of the epitaxial layer electrically connected to a Vcc electrode wherein the metal contact layer further directly contacting the doped polysilicon layer and the heavy dopant region of the second conductivity type.
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