SEMICONDUCTOR STRUCTURE WITH LOW DEFECT
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United States of America Patent
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Issued Date -
Jan 25, 2018
app pub date -
Sep 29, 2017
filing date -
Mar 7, 2016
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Abstract
Semiconductor structures are provided. The semiconductor structure includes a fin structure formed over a substrate and an isolation structure formed around the fin structure. The semiconductor structure further includes a nanowire structure formed over the fin structure and a gate structure formed around the nanowire structure. In addition, a bottommost of the nanowire structure is lower than a top surface of the isolation structure.
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