Structure and method to suppress work function effect by patterning boundary proximity in replacement metal gate
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United States of America Patent
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Jul 16, 2019
Grant Date -
Jan 25, 2018
app pub date -
Oct 3, 2017
filing date -
Jan 13, 2016
priority date (Note) -
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Abstract
A semiconductor device includes a first transistor formed on a substrate, the first transistor including a channel region positioned on the substrate; a second transistor formed on the substrate, the second transistor including a channel region positioned on the substrate; a high-k dielectric layer disposed on the channel region of the first transistor and the channel region of the second transistor; a first transistor metal gate positioned in contact with the high-k dielectric on the first transistor; a second transistor metal gate positioned in contact with the high-k dielectric on the second transistor; an oxygen absorbing barrier disposed in contact with the high-k dielectric between the first transistor and the second transistor; and a conductive electrode material disposed on the first transistor, the second transistor, and the oxygen absorbing barrier.
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