Vertically stacked FinFET fuse

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United States of America Patent

PATENT NO 10056391
APP PUB NO 20180026043A1
SERIAL NO

15661820

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Abstract

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A semiconductor structure including a stacked FinFET fuse is provided in which the stacked FinFET fuse includes a plurality of vertically stacked and spaced apart conductive semiconductor fin portions and a doped epitaxial semiconductor material structure located on exposed surfaces of each conductive semiconductor fin portion of the vertical stack. In the FinFET fuse, a topmost surface of a bottom doped epitaxial semiconductor material structure is merged to a bottommost surface of an overlying doped epitaxial semiconductor material structure.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Adusumilli, Praneet Albany, US 163 794
Reznicek, Alexander Troy, US 1408 11211
van, der Straten Oscar Guilderland Center, US 173 878

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