PARASITIC CHANNEL MITIGATION USING RARE-EARTH OXIDE AND/OR RARE-EARTH NITRIDE DIFFUSION BARRIER REGIONS

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United States of America Patent

SERIAL NO

15613480

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Abstract

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III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.

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Patent Owner(s)

Patent OwnerAddress
MACOM TECHNOLOGY SOLUTIONS HOLDINGS INC100 CHELMSFORD STREET P O BOX 259 LOWELL MA 01851

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Linthicum, Kevin J Cary, US 72 3424
Roberts, John Claassen Hillsborough, US 24 549

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