FABRICATION OF SILICON-GERMANIUM FIN STRUCTURE HAVING SILICON-RICH OUTER SURFACE
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Jun 5, 2017
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Jul 20, 2016
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Abstract
A semiconductor structure includes a substrate and a silicon-germanium (SiGe) fin formed on the substrate. The SiGe fin has a first portion having a first doping profile and a second portion having a second doping profile. The first portion of the SiGe fin has a Si-rich outer surface.
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