Power semiconductor device
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United States of America Patent
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Feb 18, 2015
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Feb 18, 2015
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A power semiconductor device is described. The device comprises a silicon carbide substrate and a layer of monocrystalline silicon having a thickness tSi no more than 5 μm disposed directly on the substrate or directly on an interfacial layer having a thickness no more than 100 nm which is disposed directly on the substrate. The device comprises a lateral transistor, such as a laterally-diffused metal oxide semiconductor transistor or lateral insulated gate bipolar transistor, comprising first and second contacts laterally-spaced contact regions disposed in the monocrystalline silicon layer.
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