Fin-based RF diodes
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United States of America Patent
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May 1, 2018
Issued Date -
N/A
app pub date -
Jun 7, 2017
filing date -
Jul 25, 2016
priority date (Note) -
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Abstract
Methods for forming a fin-based RF diode with improved performance characteristics and the resulting devices are disclosed. Embodiments include forming fins over a substrate, separated from each other, each fin having a lower portion and an upper portion; forming STI regions over the substrate, between the lower portions of adjacent fins; implanting the lower portion of each fin with a first-type dopant; implanting the upper portion of each fin, above the STI region, with the first-type dopant; forming a junction region around a depletion region and along exposed sidewalls and a top surface of the upper portion of each fin; and forming a contact on exposed sidewalls and a top surface of each junction region.
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