Unipolar spacer formation for finFETS

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United States of America Patent

PATENT NO 10103243
APP PUB NO 20180026114A1
SERIAL NO

15611122

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Abstract

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A semiconductor device includes semiconductor fins formed on a substrate, gate structures formed transversely over the fins, unipolar spacers formed over the gate structures only, and source and drain regions formed between the gate structures on the fins. The fins are free from the unipolar spacers, and the unipolar spacers have a substantially uniform thickness vertically along the gate structures and include a spacer material with an etch selectivity greater than SiN for oxide removal.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3073 29791
Xu, Peng Guilderland, US 641 4352
Yang, Jie Albany, US 504 3131

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