Bond-over-active circuity gallium nitride devices
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United States of America Patent
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Sep 4, 2018
Grant Date -
Jan 25, 2018
app pub date -
Jul 20, 2016
filing date -
Jul 20, 2016
priority date (Note) -
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Abstract
Implementations of semiconductor devices may include: a first layer with a plurality of cells, each cell having a drain finger, a source finger and a gate ring; a second layer having a drain pad and a source pad, the drain pad having a width and a source pad having a width substantially the same as the drain pad; wherein a width of each drain finger of the first layer is wider than a width of each source finger of the first layer; and wherein each drain pad is coupled to each drain finger through a first contact and the source pad is coupled to each source finger through a second contact, where a width of the first contact is wider than a width of the second contact.
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