Semiconductor device, power circuit, and computer
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United States of America Patent
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Apr 24, 2018
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app pub date -
Feb 23, 2017
filing date -
Jul 22, 2016
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Abstract
A semiconductor device according to an embodiment includes a nitride semiconductor layer and an insulating layer including an oxide film or an oxynitride film that contacts with the nitride semiconductor layer. The oxide film or the oxynitride film includes at least one impurity selected from the group consisting of boron (B), gallium (Ga), aluminum (Al), and indium (In) and carbon (C). A first peak of a concentration distribution of the at least one impurity in the insulating layer is present in the oxide film or the oxynitride film. A second peak of a concentration distribution of carbon in the insulating layer is present in the oxide film or the oxynitride film. A distance between the first peak and the nitride semiconductor layer is equal to or less than 5 nm, and a distance between the second peak and the nitride semiconductor layer is equal to or less than 5 nm.
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