Heterojunction semiconductor device having source and drain pads with improved current crowding

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10833185
APP PUB NO 20180026125A1
SERIAL NO

15678102

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Abstract

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A semiconductor device includes an active layer, a source electrode, a drain electrode, a gate electrode, a source pad, a drain pad, and a source external connecting element. The source electrode, the drain electrode, and the gate electrode are disposed on an active region of the active layer. The source pad is electrically connected to the source electrode and includes a body portion, a plurality of branch portions, and a current diffusion portion. The body portion is at least partially disposed on the active region of the active layer. The current diffusion portion interconnects the body portion and the branch portions. A width of the current diffusion portion is greater than a width of the branch portion and less than a half of a width of the body portion. The source external connecting element is disposed on the body portion and spaced from the current diffusion portion.

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Patent Owner(s)

Patent OwnerAddress
ANCORA SEMICONDUCTORS INC6F NO 252 SHANYING RD GUISHAN DIST TAOYUAN CITY 333425

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chiang, Chen-Ting Taoyuan, TW 3 16
Liao, Wen-Chia Taoyuan, TW 35 178
Liu, Ying-Chen Taoyuan, TW 6 19

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