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Abstract

A manufacturing method of a quantum dot ensemble including quantum dots each having a composition represented by a formula A_xB_1-xC_yD_1-y (0≦x≦1, 0≦y≦1, A and B are elements selected from Zn and Mg, and C and D are elements selected from the group consisting of O, S, Se, and Te). The quantum dots forming the ensemble in a mixed manner, including (a) step of preparing a plurality of quantum dots each having a composition represented by a formula A_xB_1-xC_yD_1-y (0≦x≦1, 0≦y≦1, A and B are elements selected from the group consisting of Zn and Mg, and C and D are elements selected from the group consisting of O, S, Se, and Te); and (b) step of uniformizing band gap energy of the plurality of quantum dots by optically etching the plurality of quantum dots which are prepared in the step (a). In the step (a), target values of x and y in the formula A_xB_1-xC_yD_1-y are set in such a manner that band gap energy of A_xB_1-xC_yD_1-y attains an approximately minimal value. In the step (b), the quantum dot ensemble including the quantum dots in which at least one of x and y in the formula A_xB_1-xC_yD_1-y is varied by equal to or greater than 0.05 is processed, the quantum dot ensemble having an emission spectrum of which the half-width is less than 50 nm is processed, the quantum dot ensemble having a band gap energy which is greater than a band gap energy of a bulk mixed crystal having a same composition as the composition of each of the plurality of quantum dots included in the quantum dot ensemble is processed, and the plurality of quantum dots are processed such that the average particle size thereof is equal to or less than 20 nm.

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