Switched capacitor circuit structure with method of controlling source-drain resistance across same

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United States of America Patent

PATENT NO 10348243
APP PUB NO 20180026580A1
SERIAL NO

15213529

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Abstract

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Embodiments of the present disclosure provide a circuit structure including: a switching transistor including a gate terminal, a back-gate terminal, a source terminal, and a drain terminal; a biasing node coupled to the back-gate terminal of the switching transistor, the biasing node being alternately selectable between an on state and an off state; a first capacitor source-coupled to the switching transistor; a second capacitor drain-coupled to the switching capacitor; and a first enabling node source-coupled to the switching transistor, the first enabling node being alternately selectable between an on state and an off state.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Balasubramaniyan, Arul Plano, US 18 70
Zhang, Chi Allen, US 377 2279

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