Piezoresistive microphone and method of fabricating the same
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United States of America Patent
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May 1, 2018
Issued Date -
N/A
app pub date -
Aug 25, 2016
filing date -
Jul 21, 2016
priority date (Note) -
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status (Latency Note)
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Abstract
A piezoresistive microphone includes a substrate, an insulating layer, and a polysilicon layer. A first pattern is disposed within the polysilicon layer. The first pattern includes numerous first opening. A second pattern is disposed within the polysilicon layer. The second pattern includes numerous second openings. The first pattern surrounds the second pattern. Each first opening and each second opening are staggered. A first resistor is disposed in the polysilicon and between the first pattern and the second pattern. The first resistor is composed of numerous first heavily doped regions and numerous first lightly doped regions. The first heavily doped regions and the first lightly doped regions are disposed in series. The first heavily doped region and the first lightly doped region are disposed alternately. A cavity is disposed in the insulating layer and the substrate.
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