INTEGRATION SCHEME FOR MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICES AND COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) DEVICES

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United States of America Patent

SERIAL NO

15285032

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Abstract

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Processes for integrating complementary metal-oxide-semiconductor (CMOS) devices with microelectromechanical systems (MEMS) devices are provided. In some embodiments, the MEMS devices are formed on a sacrificial substrate or wafer, the sacrificial substrate or wafer is bonded to a CMOS die or wafer, and the sacrificial substrate or wafer is removed. In other embodiments, the MEMS devices are formed over a sacrificial region of a CMOS die or wafer and the sacrificial region is subsequently removed. Integrated circuit (ICs) resulting from the processes are also provided.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Chun-Wen Zhubei City, TW 253 3373
Chu, Chia-Hua Zhubei-City, TW 190 2466

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