METHODS FOR PRODUCING SINGLE CRYSTAL SILICON INGOTS WITH REDUCED SEED END OXYGEN
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United States of America Patent
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Jul 28, 2017
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Jul 28, 2016
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Abstract
Methods for producing single crystal silicon ingots with a reduced oxygen content toward the seed end of the ingot are disclosed. The methods may involve controlling growth conditions during crown formation and, in some embodiments, controlling the rate of crucible rotation during crown rotation to increase the time the crucible is rotated at or below a threshold value during crown growth.
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