Formation method of interconnection structure of semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10658234
APP PUB NO 20180033687A1
SERIAL NO

15223902

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Abstract

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Structures and formation methods of a semiconductor device structure are provided. The method includes forming a dielectric layer over a semiconductor substrate and forming an opening in the dielectric layer to expose a conductive element. The method also includes forming a conductive layer over the conductive element and modifying an upper portion of the conductive layer using a plasma operation to form a modified region. The method further includes forming a conductive plug over the modified region.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Chih-Wei Jhudong Township, Hsinchu County, TW 337 1158
Chui, Chi-On Hsinchu, TW 51 62
Huang, Huang-Yi Hsinchu, TW 47 205
Hung, Min-Hsiu Tainan, TW 27 42
Li, Yida Hsinchu, TW 6 7
Lin, Cheng-Tung Jhudong Township, Hsinchu County, TW 70 667
Sheu, Jyh-Cherng Hsinchu, TW 45 1246
Wang, Sung-Li Zhubei, TW 123 2807
Wu, Pei-Wen Xinfeng Township, Hsinchu County, TW 5 7
Yeo, Yee-Chia Hsinchu, TW 426 6714

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