Semiconductor device

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United States of America Patent

PATENT NO 10157795
APP PUB NO 20180033698A1
SERIAL NO

15727626

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Abstract

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A semiconductor device includes a substrate, a first gate, a second gate, and an insulating structure. The substrate includes a first fin and a second fin. The first gate is disposed over the first fin. The second gate is disposed over the second fin. A gap is formed between the first gate and the second gate, and the gap gets wider toward the substrate. The insulating structure is disposed in the gap. The insulating structure has a top surface and a bottom surface opposite to each other. The bottom surface faces the substrate. An edge of the top surface facing the first gate is curved inward the top surface.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Che-Cheng New Taipei, TW 401 2400
Chen, Wei-Ting Hsinchu, TW 149 593
Lin, Chih-Han Hsinchu, TW 413 1898

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