METHOD, APPARATUS, AND SYSTEM FOR REDUCING DOPANT CONCENTRATIONS IN CHANNEL REGIONS OF FINFET DEVICES
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United States of America Patent
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Feb 1, 2018
app pub date -
Jul 29, 2016
filing date -
Jul 29, 2016
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Abstract
We disclose semiconductor devices, comprising a semiconductor substrate comprising a substrate material; and a plurality of fins disposed on the substrate, each fin comprising a lower region comprising the substrate material, a dopant region disposed above the lower region and comprising at least one dopant, and a channel region disposed above the dopant region and comprising a semiconductor material, wherein the channel region comprises less than 1×1018 dopant molecules/cm3, as well as methods, apparatus, and systems for fabricating such semiconductor devices.
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