Variable resistance memory device and method of manufacturing the same
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United States of America Patent
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Jan 22, 2019
Grant Date -
Feb 1, 2018
app pub date -
Mar 1, 2017
filing date -
Jul 28, 2016
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Abstract
A variable resistance memory device may include: a first electrode layer; a selection device layer on the first electrode layer, the selection device layer including a chalcogenide switching material consisting essentially of germanium (Ge), selenium (Se), and antimony (Sb), wherein a content of the Ge is less than a content of the Se based on an atomic weight; a second electrode layer on the selection device layer; a variable resistance layer on the second electrode layer, the variable resistance layer including a chalcogenide material; and a third electrode layer on the variable resistance layer.
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