Semiconductor device with a steep sub-threshold slope

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10319847
APP PUB NO 20180033864A1
SERIAL NO

15222324

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Abstract

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A method is presented for forming a semiconductor device. The method may include forming a source contact on the semiconductor substrate, forming a drain contact on the semiconductor substrate, and forming a gate structure on the semiconductor substrate between the source and drain contacts, the gate structure including a piezoelectric material having at least one graphene layer.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cao, Qing Yorktown Heights, US 150 561
Li, Ning White Plains, US 711 4085

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