Silicidation of bottom source/drain sheet using pinch-off sacrificial spacer process

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10211316
APP PUB NO 20180033868A1
SERIAL NO

15716690

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A vertical fin field-effect-transistor and a method for fabricating the same. The vertical fin field-effect-transistor includes at least a substrate, a first source/drain layer, and a plurality of fins each disposed on and in contact with the first source/drain layer. Silicide regions are disposed within a portion of the first source/drain layer. A gate structure is in contact with the plurality of fins, and a second source/drain layer is disposed on the gate structure. The method includes forming silicide in a portion of a first source/drain layer. A first spacer layer is formed in contact with at least the silicide, the first source/drain layer and the plurality of fins. A gate structure is formed in contact with the plurality of fins and the first spacer layer. A second spacer layer is formed in contact with the gate structure and the plurality of fins.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Anderson, Brent A Jericho, US 533 6628
Bu, Huiming Glenmont, US 108 1082
Hook, Terence B Jericho, US 210 1680
Lie, Fee Li Albany, US 177 991
Wang, Junli Slingerlands, US 492 2758

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