Semiconductor Devices, Electrical Devices and Methods for Forming a Semiconductor Device

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United States of America Patent

SERIAL NO

15660426

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Abstract

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A semiconductor device includes a plurality of compensation regions arranged in a semiconductor substrate of the semiconductor device. The compensation regions of the plurality of compensation regions have a first conductivity type. The semiconductor device also includes a plurality of drift region portions of a drift region of a vertical electrical element arrangement arranged in the semiconductor substrate of the semiconductor device. The drift region has a second conductivity type. Drift region portions of the plurality of drift region portions and compensation regions of the plurality of compensation regions are arranged alternatingly in a lateral direction. The semiconductor device further includes a tap electrode structure in contact with a tap portion of the drift region at a front side surface of the semiconductor substrate. The tap portion is located laterally between two neighboring compensation regions of the plurality of compensation regions.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AUSTRIA AG9500 VILLACH

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mauder, Anton Kolbermoor, DE 308 1984
Willmeroth, Armin Friedberg, DE 131 1114

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