NITRIDE SEMICONDUCTOR TEMPLATE AND METHOD FOR MANUFACTURING SAME

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Feb 8, 2016
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Feb 25, 2015

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Abstract

A nitride semiconductor template includes a Ga₂O₃substrate, a buffer layer formed on the Ga₂O₃substrate and including AlN as a principal component, a first nitride semiconductor layer formed on the buffer layer and including Al_xGa_1-xN (0.2yGa_1-yN (0.2≦y≦0.55, y

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Patent Owner(s)

Patent Owner	Address
RIKEN	2-1 HIROSAWA WAKO-SHI SAITAMA 351-0198
TAMURA CORPORATION	1-19-43 HIGASHI-OIZUMI NERIMA-KU TOKYO 1788511

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Inventor Name	Address	# of filed Patents	Total Citations
HIRAYAMA, Hideki	Saitama, JP	90	670
IIZUKA, Kazuyuki	Tokyo, JP	33	311
KURAMATA, Akito	Tokyo, JP	22	350
MORISHIMA, Yoshikatsu	Tokyo, JP	11	147

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NITRIDE SEMICONDUCTOR TEMPLATE AND METHOD FOR MANUFACTURING SAME

Number of patents in Portfolio can not be more than 2000

United States of America Patent

15551960

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15551960

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