III-P LIGHT EMITTING DEVICE WITH A SUPERLATTICE
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United States of America Patent
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Jul 26, 2017
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Jul 28, 2016
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Abstract
A device includes a semiconductor structure comprising a III-P light emitting layer disposed between an n-type region and a p-type region. The n-type region includes a superlattice. The superlattice includes a plurality of stacked layer pairs, each layer pair including a first layer and a second layer. The first layer has a smaller aluminum composition than the second layer.
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