LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

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United States of America Patent

SERIAL NO

15589061

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Abstract

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A light emitting diode and a method of fabricating the same are described. The light emitting diode has: a hole transport layer, an active layer and an electron transport layer. The active layer is disposed on the hole transport layer, and the active layer has a mesophase structure of an organic amine compound and a perovskite structure compound. The electron transport layer is disposed on the active layer.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL CHENG KUNG UNIVERSITYTAINAN CITY

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Inventor Name Address # of filed Patents Total Citations
GUO, Tzung-fang Tainan City, TW 9 79

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