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Abstract

A wafer processing method of dividing along a plurality of projected dicing lines set on the wafer includes a placing step of placing the wafer on a heating table with a tape interposed therebetween, the wafer having modified layers, from which to start to divide the wafer, formed therein at positions aligned with the projected dicing lines, the tape being applied to one surface of the wafer, and a dividing step of dividing the wafer on the heating table by heating with the heating table and thereafter cooling an exposed opposite surface in its entirety of the wafer with a cooing unit whereby the wafer starts being ruptured from the modified layers along the projected dicing lines due to a thermal shock caused by a temperature difference developed between the heated and cooled surfaces of the wafer.

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First Claim