Diode design of FinFET device

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United States of America Patent

PATENT NO 10833062
APP PUB NO 20180040604A1
SERIAL NO

15602665

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Abstract

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A method for manufacturing an electrostatic discharge (ESD) protection device includes providing a semiconductor structure including a semiconductor substrate including a first region of a first conductivity type and a semiconductor fin on the semiconductor substrate; forming an electrode on the semiconductor fin; and performing a doping process on the semiconductor structure to forming a second region in the first region, the second region having a second conductivity type opposite the first conductivity type to form a pn junction in the semiconductor substrate. Since the pn junction is formed in the semiconductor substrate, it has a relatively large area to prevent local hot spots from occurring when a current flows through the ESD protection device, thereby reducing performance degradation of a semiconductor device.

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Patent Owner(s)

  • SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION; SEMICONDUCTOR MANUFACTURING INTERNATIONAL ( SHANGHAI) CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Zhou, Fei Shanghai, CN 332 2134

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