Electrostatic discharge protection device and method
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United States of America Patent
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Oct 6, 2020
Grant Date -
Feb 8, 2018
app pub date -
Jul 25, 2017
filing date -
Aug 2, 2016
priority date (Note) -
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Abstract
An electrostatic discharge (ESD) protection device includes a semiconductor substrate and a semiconductor fin located on the semiconductor substrate. The semiconductor fin includes a well region, a first doped region, and a second doped region. The first doped region and the second doped region are respectively adjacent to and being separated by a first portion of the well region. The device also includes a first gate structure on the semiconductor fin between the first doped region and the second doped region, and a first conductive structure electrically connecting the gate structure and the first doped region to a same potential. The ESD protection device can also have a third doped region and a second gate structure coupled to the same potential. The device also has a second conductive structure for connecting to a point between an external signal and a circuit to be protected.
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