Fe-Pt-BASED SPUTTERING TARGET WITH DISPERSED C GRAINS
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United States of America Patent
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Feb 15, 2018
app pub date -
Oct 11, 2017
filing date -
Dec 20, 2010
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Abstract
A sintered compact sputtering target in which a composition ratio based on atomicity is represented by a formula of (Fe100−X—PtX)100−A—CA (provided A is a number which satisfies 20≦A≦50 and X is a number which satisfies 35≦X≦55), wherein C grains are finely dispersed in an alloy, and the relative density is 90% or higher. The production of a magnetic thin film with granular structure is provided without using an expensive simultaneous sputtering device, and a high-density sputtering target capable of reducing the amount of particles generated during sputtering is provided.
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