Gas injector for semiconductor processes and film deposition apparatus

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10801110
APP PUB NO 20180044792A1
SERIAL NO

15590712

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A gas injector is used in a film deposition apparatus for semiconductor processes. The gas injector comprises a plurality of gas inlets, a plurality of gas flow channels, and a plurality of gas outlets. The gas inlets introduce several kinds of gases into the gas flow channels. The several kinds of gases are delivered to the gas outlets by the gas flow channels. The cross-sectional area of a portion of at least one of the gas flow channels is gradually changed relative to the gas outlets.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
HERMES-EPITEK CORPORATION14F NO 38 SEC 2 DUN-HUA S ROAD DA-AN DISTRICT TAIPEI 10683

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shieh, Shih-Yung Taipei, TW 7 13

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Apr 13, 2028
11.5 Year Payment $7400.00 $3700.00 $1850.00 Apr 13, 2032
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00