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Abstract

A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes forming a base substrate, including a substrate, a gate structure on the substrate, source and drain doped regions in the substrate on both sides of the gate structure, and a dielectric layer on the substrate and on top of the gate structure. The method also includes forming a contact hole, penetrating through the dielectric layer, wherein a bottom of the contact hole extends into each of the source and drain doped regions. In addition, the method includes forming a doped layer, in each of the source and drain doped regions by a doping process via the bottom and a portion of sidewalls of the contact hole. Further, the method includes forming a conductive plug in the contact hole.

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First Claim