High power transistors

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United States of America Patent

PATENT NO 10134658
APP PUB NO 20180047656A1
SERIAL NO

15233556

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Abstract

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High power transistors, such as high power gallium nitride (GaN) transistors, are described. These high power transistors have larger total gate widths than conventional high power transistors by arranging multiple linear arrays of gate, drain, and source contacts in parallel. Thereby, the total gate width and the power rating of the high power transistor may be increased without elongating the die of the high power transistor. Accordingly, the die of the high power transistor may be mounted in a smaller circuit package relative to conventional dies with the same power rating.

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Patent Owner(s)

  • MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mkhitarian, Aram Glendale, US 4 33
Ngo, Vincent Westminster, US 5 9

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