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Abstract

A method of fabricating a thin film transistor structure is described. The method forms a photoresist pattern layer on an active pattern layer and a part of a gate insulating layer to expose a source predetermining position and a drain predetermining position of the gate insulating layer. The photoresist pattern layer has a plurality of inverted trapezoidal blocks which can be used as a mask, thereby depositing a metal layer on the photoresist pattern layer, the source predetermining position and the drain predetermining position. After removing the photoresist pattern layer and the metal layer thereon, the remaining metal layer is patterned to form a source and a drain. In the method of fabricating a thin film transistor structure, a fabricating process can be simplified, and it is unnecessary to form an etching stop layer to protect a back channel.

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