EDGE-EMITTING SEMICONDUCTOR LASER AND METHOD FOR THE PRODUCTION THEREOF
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United States of America Patent
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Mar 18, 2016
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Mar 20, 2015
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Abstract
An edge-emitting semiconductor laser includes a semiconductor structure laterally bounded by first and second facets and having a central section and a first edge section, a layer sequence offset relative to the central section in the growth direction in the first edge section such that, in the first edge section, one of the cladding layers or one of the waveguide layers is arranged in the growth direction at a height of the active layer in the central section, the layer sequence includes an epitaxially grown additional layer arranged between the upper side and the lower cladding layer, the additional layer is not arranged between the upper side and the lower cladding layer in the central section, and the additional layer is electrically insulating or has doping with the opposite sign to the lower cladding layer.
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