TEXTURING OF SILICON SURFACE WITH DIRECT-SELF ASSEMBLY PATTERNING
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United States of America Patent
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Aug 17, 2016
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Aug 17, 2016
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Abstract
A method of texturing a silicon (Si) wafer and the resulting device are provided. Embodiments include forming a mask over an upper surface of a Si wafer; patterning the mask by direct-self assembly (DSA); etching the Si wafer through the patterned mask to form holes in the Si wafer; removing the mask; and etching the holes to form a textured surface in the Si wafer.
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