SOI island in a power semiconductor device

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United States of America Patent

PATENT NO 10256299
APP PUB NO 20180053822A1
SERIAL NO

15675913

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Abstract

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A power semiconductor device includes a semiconductor-on-insulator island having a semiconductor region and an insulation structure, the insulation structure being formed by an oxide and separating the semiconductor region from a portion of a semiconductor body of the power semiconductor device. The insulation structure includes a sidewall that laterally confines the semiconductor region; a bottom that vertically confines the semiconductor region; and a local deepening that forms at least a part of a transition between the sidewall and the bottom, wherein the local deepening extends further along the extension direction as compared to the bottom.

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mauder, Anton Kolbermoor, DE 346 3153
Philippou, Alexander Munich, DE 34 133

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