Importance

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Abstract

A semiconductor device includes a body region arranged between source and drift regions in a semiconductor body. A gate trench extends from a first surface of the semiconductor body, through the source and body regions and into the drift region. A diode region extends under the gate trench, and a pn junction is between the diode region and the drift region below the gate trench. A gate electrode arranged in the gate trench is dielectrically insulated from the source, body, diode and drift regions by a gate dielectric. A further trench spaced apart from the gate trench extends from the first surface of the semiconductor body, through the source and diode regions and into the drift region. A source electrode arranged in the further trench adjoins the drift region in the further trench to form a Schottky contact with the drift region.

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First Claim