Quantum dot sensor readout
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United States of America Patent
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app pub date -
Mar 2, 2016
filing date -
Mar 23, 2015
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Abstract
An apparatus, including a quantum dot graphene field effect transistor configured to operate such that photons incident thereon cause electron-hole pairs to be formed; a connector element connected to the back gate of the transistor; a switch element as an output switch to provide an output for a current flowing through the transistor. The transistor is configured to be back gate biased via the connector element connected to the back gate such that the electrons or the holes formed are trapped in an at least one quantum dot and respectively the holes or the electrons migrate to the channel of the transistor. A drain to source voltage connected to the transistor causes a current proportional to the charge of the holes or electrons trapped at the quantum dots by the electrons or holes to flow in the channel.
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