VAPOR-PHASE GROWTH METHOD
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United States of America Patent
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app pub date -
Aug 28, 2017
filing date -
Aug 29, 2016
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Abstract
A substrate W is placed on a support part 7 provided in a reaction chamber 2. While the substrate W is rotated together with the support part 7 around a rotation shaft A passing through a center of the substrate W at a rotating speed of 1300 rpm or more and 2000 rpm or less, a source gas including an organic metal is supplied onto the substrate W from a portion above the reaction chamber 2 to cause a III-V semiconductor layer to grow on the substrate W.
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