Semiconductor memory device and reading method thereof

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United States of America Patent

PATENT NO 10141036
APP PUB NO 20180061464A1
SERIAL NO

15672310

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Abstract

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The invention provides a semiconductor memory device and a reading method thereof, which are capable of suppressing a peak current when pre-charging a bit line are provided. The reading method of a flash memory of the present invention includes steps of: pre-charging a selected bit line; and reading a voltage or a current of the pre-charged selected bit line. The step of pre-charging is performed by pre-charging a sense node SNS to Vcc−Vth at a time t1, pre-charging a node TOBL to VCLAMP2 at a time t2, pre-charging the node TOBL to VCLAMP1 at a time t5, and pre-charging the sense node SNS to Vcc at a time t6.

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Patent Owner(s)

  • WINBOND ELECTRONICS CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yamauchi, Kazuki Kanagawa, JP 50 273

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