Semiconductor memory device for improving high temperature data retention
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United States of America Patent
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May 28, 2019
Grant Date -
Mar 1, 2018
app pub date -
Aug 2, 2017
filing date -
Aug 24, 2016
priority date (Note) -
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Abstract
A semiconductor memory device improving a high-temperature data retention is provided. Here, a flash memory includes an erasing element erasing a selected storage cell in a storage cell array. The erasing element further includes an applying element, a verifying element, and a decision element. The applying element applies a monitoring erasing pulse to a monitoring storage cell before starting an erasing operation for selecting the storage cell. The verifying element performs a verification of the monitoring storage cell to which the monitoring erasing pulse is applied. The decision element detennines ISPE conditions based on a verification result of the verifying element. The erasing element erases the storage cell according to the determined ISPE conditions.
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