Methods for forming a semiconductor device using tilted reactive ion beam

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United States of America Patent

PATENT NO 10366895
APP PUB NO 20180061644A1
SERIAL NO

15687874

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Abstract

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A semiconductor device and method is disclosed. In one example, the method for forming a semiconductor device includes forming a trench extending from a front side surface of a semiconductor substrate into the semiconductor substrate. The method includes forming of material to be structured inside the trench. Material to be structured is irradiated with a tilted reactive ion beam at a non-orthogonal angle with respect to the front side surface such that an undesired portion of the material to be structured is removed due to the irradiation with the tilted reactive ion beam while an irradiation of another portion of the material to be structured is masked by an edge of the trench.

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Laven, Johannes Georg Taufkirchen, DE 123 608
Mauder, Anton Kolbermoor, DE 346 3157
Schulze, Hans-Joachim Taufkirchen, DE 684 3920
Schustereder, Werner Villach, AT 65 217

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