Semiconductor device and method

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United States of America Patent

PATENT NO 10658199
APP PUB NO 20180061669A1
SERIAL NO

15368192

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Abstract

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A method of manufacturing a semiconductor device includes placing a polymer raw material mixture over a substrate. The polymer raw material may include a polymer precursor, a photosensitizer, and an additive. The polymer raw material mixture is exposed to radiation to form a dielectric layer and cured at a temperature of between about 150° C. and about 230° C.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hu, Yu-Hsiang Hsin-Chu, TW 182 621
Kuo, Hung-Jui Hsin-Chu, TW 370 1619
Liao, Sih-Hao New Taipei, TW 90 144
Yu, Chen-Hua Hsin-Chu, TW 2039 41205

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