Spectral reflectometry for in-situ process monitoring and control

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United States of America Patent

PATENT NO 10438825
APP PUB NO 20180061691A1
SERIAL NO

15688751

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Abstract

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Methods and systems for performing in-situ, selective spectral reflectometry (SSR) measurements of semiconductor structures disposed on a wafer are presented herein. Illumination light reflected from a wafer surface is spatially imaged. Signals from selected regions of the image are collected and spectrally analyzed, while other portions of the image are discarded. In some embodiments, a SSR includes a dynamic mirror array (DMA) disposed in the optical path at or near a field plane conjugate to the surface of the semiconductor wafer under measurement. The DMA selectively blocks the undesired portion of wafer image. In other embodiments, a SSR includes a hyperspectral imaging system including a plurality of spectrometers each configured to collect light from a spatially distinct area of a field image conjugate to the wafer surface. Selected spectral signals associated with desired regions of the wafer image are selected for analysis.

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Patent Owner(s)

  • KLA-TENCOR CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jain, Prateek San Jose, US 41 218
Krishnan, Shankar Santa Clara, US 152 983
Peterlinz, Kevin A Fremont, US 9 114
Shchegrov, Andrei V Campbell, US 90 2108
Wack, Daniel Fredericksburg, US 14 168

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