Importance

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Abstract

A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes forming a substrate including a plurality of initial fins, and forming an isolation layer on the substrate between the adjacent initial fins. The method also includes forming a stop layer, and forming a filling opening in the stop layer and forming a trench in the initial fins and the isolation layer. In addition, the method includes forming an isolation structure in the trench and forming a sacrificial layer in the filling opening. Moreover, the method includes removing the stop layer, and back-etching the isolation layer to expose portions of sidewalls of the fins. Further, the method includes forming a gate structure, across a length portion of the fins and covering portions of top surface and sidewalls of each fin, and on the fins, and forming a dummy gate structure on the isolation structure.

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First Claim