Semiconductor device

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United States of America Patent

PATENT NO 10157903
APP PUB NO 20180061821A1
SERIAL NO

15683883

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Abstract

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A semiconductor device that improves the discharge capacity with respect to ESD without increasing the surface area of the semiconductor device includes a first conductive portion including plural portions, each of the plural portions having a first type of conductivity, and each of the plural portions extending in a first direction and being arranged in parallel at a distance from each other in a second direction that intersects the first direction; and a second conductive portion including an island portion provided between the respective plural portions of the first conductive portion and extending in the first direction, the second conductive portion having a second type of conductivity that is different from the first type of conductivity.

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Patent Owner(s)

  • LAPIS SEMICONDUCTOR CO., LTD.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Higashi, Masahiko Kanagawa, JP 58 505

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